JPS55132048A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55132048A
JPS55132048A JP3993479A JP3993479A JPS55132048A JP S55132048 A JPS55132048 A JP S55132048A JP 3993479 A JP3993479 A JP 3993479A JP 3993479 A JP3993479 A JP 3993479A JP S55132048 A JPS55132048 A JP S55132048A
Authority
JP
Japan
Prior art keywords
substrate
fixed
metallic layer
flame coating
roughened
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3993479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6337496B2 (en]
Inventor
Toshinobu Sekiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3993479A priority Critical patent/JPS55132048A/ja
Publication of JPS55132048A publication Critical patent/JPS55132048A/ja
Priority to US06/563,884 priority patent/US4542401A/en
Publication of JPS6337496B2 publication Critical patent/JPS6337496B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
    • H01L2924/15724—Aluminium [Al] as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
JP3993479A 1979-04-03 1979-04-03 Semiconductor device Granted JPS55132048A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3993479A JPS55132048A (en) 1979-04-03 1979-04-03 Semiconductor device
US06/563,884 US4542401A (en) 1979-04-03 1983-12-22 Semiconductor device with sprayed metal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3993479A JPS55132048A (en) 1979-04-03 1979-04-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55132048A true JPS55132048A (en) 1980-10-14
JPS6337496B2 JPS6337496B2 (en]) 1988-07-26

Family

ID=12566764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3993479A Granted JPS55132048A (en) 1979-04-03 1979-04-03 Semiconductor device

Country Status (2)

Country Link
US (1) US4542401A (en])
JP (1) JPS55132048A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007013664A1 (en) * 2005-07-27 2007-02-01 Showa Denko K.K. Light-emitting diode light source

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757934A (en) * 1987-02-06 1988-07-19 Motorola, Inc. Low stress heat sinking for semiconductors
IT1222152B (it) * 1987-07-28 1990-09-05 Sgs Microelettronica Spa Dispositivo a piu' piastrine di materiale in contenitore di metallo e resina
US4799309A (en) * 1987-12-24 1989-01-24 Ford Motor Company Method of making a rectifier and control module for an alternator
NL8800902A (nl) * 1988-04-08 1989-11-01 Philips Nv Werkwijze voor het aanbrengen van een halfgeleiderlichaam op een drager.
EP0434264B1 (en) * 1989-12-22 1994-10-12 Westinghouse Electric Corporation Package for power semiconductor components
US5362680A (en) * 1992-08-18 1994-11-08 Texas Instruments Incorporated Technique for enhancing adhesion capability of heat spreaders in molded packages
US6300167B1 (en) 1994-12-12 2001-10-09 Motorola, Inc. Semiconductor device with flame sprayed heat spreading layer and method
US6099974A (en) * 1997-07-16 2000-08-08 Thermal Spray Technologies, Inc. Coating that enables soldering to non-solderable surfaces
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
US6341848B1 (en) 1999-12-13 2002-01-29 Hewlett-Packard Company Fluid-jet printer having printhead with integrated heat-sink
US20040065432A1 (en) * 2002-10-02 2004-04-08 Smith John R. High performance thermal stack for electrical components
JP2006332204A (ja) * 2005-05-24 2006-12-07 Toto Ltd 静電チャック
CN101896049A (zh) * 2009-05-19 2010-11-24 晟铭电子科技股份有限公司 一种散热模块及其制造方法
JP2011212684A (ja) * 2010-03-31 2011-10-27 Hitachi Ltd 金属接合部材及びその製造方法
DE102014214784A1 (de) * 2014-07-28 2016-02-11 Continental Automotive Gmbh Schaltungsträger, elektronische Baugruppe, Verfahren zum Herstellen eines Schaltungsträgers
DE102018104521B4 (de) * 2018-02-28 2022-11-17 Rogers Germany Gmbh Metall-Keramik-Substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52675A (en) * 1975-06-19 1977-01-06 Nippon Fuitsushingutatsukuru K Process for producing fishing rods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290564A (en) * 1963-02-26 1966-12-06 Texas Instruments Inc Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52675A (en) * 1975-06-19 1977-01-06 Nippon Fuitsushingutatsukuru K Process for producing fishing rods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007013664A1 (en) * 2005-07-27 2007-02-01 Showa Denko K.K. Light-emitting diode light source

Also Published As

Publication number Publication date
US4542401A (en) 1985-09-17
JPS6337496B2 (en]) 1988-07-26

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